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RN1706JE(TE85L,F) Original stock-wholesale price

Toshiba Semiconductor and Storage RN1706JE(TE85L,F)

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Toshiba Semiconductor and Storage RN1706JE(TE85L,F)

Manufacturer Model： RN1706JE(TE85L,F)
Manufacturer： Toshiba Semiconductor and Storage
Package/Specification

Product Description： TRANS 2NPN PREBIAS 0.1W ESV

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Cut Tape (CT)
Product Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)

Technical Documentation
Data Book	RN1706JE(TE85L,F).pdf

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RN1706JE(TE85L,F) Original stock-wholesale price

Toshiba Semiconductor and Storage RN1706JE(TE85L,F)

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