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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > >>

NSVMUN5133DW1T1G Original stock-wholesale price

NSVMUN5133DW1T1G

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NSVMUN5133DW1T1G

Manufacturer Model: NSVMUN5133DW1T1G
Manufacturer: onsemi
Package/Specification
Product Description:
TRANS 2PNP BRT BIPO SOT363-6
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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Advantage spot
  • 4-11404-2

    4-11404-2

  • T3477-018

    T3477-018

  • SBM51214G

    SBM51214G

  • I-2X12FOM3LM-CAS-MA

    I-2X12FOM3LM-CAS-MA

  • I-2X12FOM3LM-CAS-MB

    I-2X12FOM3LM-CAS-MB

  • I-2X12FOM3LM-CAS-FA

    I-2X12FOM3LM-CAS-FA

  • Product Classification

    Transistors - Bipolar (BJT) - Arrays, Pre-Biased

    Mfr

    onsemi

    Series

    Automotive, AEC-Q101

    Package

    Tape & Reel (TR)

    Product Status

    Active

    Transistor Type

    2 PNP - Pre-Biased (Dual)

    Current - Collector (Ic) (Max)

    100mA

    Voltage - Collector Emitter Breakdown (Max)

    50V

    Resistor - Base (R1)

    4.7kOhms

    Resistor - Emitter Base (R2)

    47kOhms

    DC Current Gain (hFE) (Min) @ Ic, Vce

    80 @ 5mA, 10V

    Current - Collector Cutoff (Max)

    250mV @ 300µA, 10mA

    Current - Collector Cutoff (Max)

    500nA

    Technical Documentation
    Data Book NSVMUN5133DW1T1G.pdf

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