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VS-GB200TH120U Original stock-wholesale price

Vishay General Semiconductor - Diodes Division VS-GB200TH120U

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Vishay General Semiconductor - Diodes Division VS-GB200TH120U

Manufacturer Model： VS-GB200TH120U
Manufacturer： Vishay General Semiconductor - Diodes Division
Package/Specification

Product Description： IGBT MOD 1200V 330A INT-A-PAK

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

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T3477-018

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I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Modules
Mfr	Vishay General Semiconductor - Diodes Division
Series	-
Package	Bulk
Product Status	Obsolete
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	330 A
Power - Max	1316 W
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 200A
Input Capacitance (Cies) @ Vce	5 mA
Input Capacitance (Cies) @ Vce	16.9 nF @ 30 V

Technical Documentation
Data Book	VS-GB200TH120U.pdf

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VS-GB200TH120U Original stock-wholesale price

Vishay General Semiconductor - Diodes Division VS-GB200TH120U

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