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APTGT35A120D1G Original stock-wholesale price

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Microsemi Corporation APTGT35A120D1G

Manufacturer Model： APTGT35A120D1G
Manufacturer： Microsemi Corporation
Package/Specification

Product Description： IGBT MODULE 1200V 55A 205W D1

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Modules
Mfr	Microsemi Corporation
Series	-
Package	Bulk
Product Status	Discontinued at Digi-Key
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	55 A
Power - Max	205 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Input Capacitance (Cies) @ Vce	5 mA
Input Capacitance (Cies) @ Vce	2.5 nF @ 25 V

Technical Documentation
Data Book	APTGT35A120D1G.pdf

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APTGT35A120D1G Original stock-wholesale price

Microsemi Corporation APTGT35A120D1G

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