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BSM150GB170DN2E3256HDLA1 Original stock-wholesale price

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BSM150GB170DN2E3256HDLA1

Manufacturer Model： BSM150GB170DN2E3256HDLA1
Manufacturer： Infineon Technologies
Package/Specification

Product Description： BSM150GB170DN2 - INSULATED GATE

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x103.40000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Modules
Mfr	Infineon Technologies
Series	-
Package	Bulk
Product Status	Active
IGBT Type	-
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	300 A
Power - Max	1250 W
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 150A
Input Capacitance (Cies) @ Vce	300 µA
Input Capacitance (Cies) @ Vce	10 nF @ 25 V

Technical Documentation
Data Book	BSM150GB170DN2E3256HDLA1.pdf

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BSM150GB170DN2E3256HDLA1 Original stock-wholesale price

BSM150GB170DN2E3256HDLA1

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