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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - IGBTs - Modules > >>

FF150R12ME3GBOSA1 Original stock-wholesale price

FF150R12ME3GBOSA1

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FF150R12ME3GBOSA1

Manufacturer Model: FF150R12ME3GBOSA1
Manufacturer: Infineon Technologies
Package/Specification
Product Description:
IGBT MOD 1200V 200A 695W
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • I-2X12FOM3LM-CAS-FA

    I-2X12FOM3LM-CAS-FA

  • Product Classification

    Transistors - IGBTs - Modules

    Mfr

    Infineon Technologies

    Series

    EconoDUAL™

    Package

    Bulk

    Product Status

    Not For New Designs

    IGBT Type

    Trench Field Stop

    Configuration

    Half Bridge

    Voltage - Collector Emitter Breakdown (Max)

    1200 V

    Current - Collector (Ic) (Max)

    200 A

    Power - Max

    695 W

    Vce(on) (Max) @ Vge, Ic

    2.15V @ 15V, 150A

    Input Capacitance (Cies) @ Vce

    5 mA

    Input Capacitance (Cies) @ Vce

    10.5 nF @ 25 V

    Technical Documentation
    Data Book FF150R12ME3GBOSA1.pdf

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