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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - IGBTs - Modules > >>

DF80R12W2H3FB11BPSA1 Original stock-wholesale price

DF80R12W2H3FB11BPSA1

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DF80R12W2H3FB11BPSA1

Manufacturer Model: DF80R12W2H3FB11BPSA1
Manufacturer: Infineon Technologies
Package/Specification
Product Description:
IGBT MOD 1200V 20A 20MW
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • Product Classification

    Transistors - IGBTs - Modules

    Mfr

    Infineon Technologies

    Series

    EconoPACK™ 2

    Package

    Tray

    Product Status

    Active

    IGBT Type

    Trench Field Stop

    Configuration

    Half Bridge

    Voltage - Collector Emitter Breakdown (Max)

    1200 V

    Current - Collector (Ic) (Max)

    20 A

    Power - Max

    20 mW

    Vce(on) (Max) @ Vge, Ic

    1.7V @ 15V, 20A

    Input Capacitance (Cies) @ Vce

    1 mA

    Input Capacitance (Cies) @ Vce

    2.35 nF @ 25 V

    Technical Documentation
    Data Book DF80R12W2H3FB11BPSA1.pdf

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