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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - IGBTs - Modules > >>

FF200R17KE3HOSA1 Original stock-wholesale price

FF200R17KE3HOSA1

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FF200R17KE3HOSA1

Manufacturer Model: FF200R17KE3HOSA1
Manufacturer: Infineon Technologies
Package/Specification
Product Description:
IGBT MOD 1700V 310A 1250W
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • Product Classification

    Transistors - IGBTs - Modules

    Mfr

    Infineon Technologies

    Series

    C

    Package

    Tray

    Product Status

    Active

    IGBT Type

    Trench Field Stop

    Configuration

    Half Bridge

    Voltage - Collector Emitter Breakdown (Max)

    1700 V

    Current - Collector (Ic) (Max)

    310 A

    Power - Max

    1250 W

    Vce(on) (Max) @ Vge, Ic

    2.45V @ 15V, 200A

    Input Capacitance (Cies) @ Vce

    3 mA

    Input Capacitance (Cies) @ Vce

    18 nF @ 25 V

    Technical Documentation
    Data Book FF200R17KE3HOSA1.pdf

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