YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - IGBTs - Single > >>

GT10J312(Q) Original stock-wholesale price

Toshiba Semiconductor and Storage GT10J312(Q)

The image is for reference only



Toshiba Semiconductor and Storage GT10J312(Q)

Manufacturer Model： GT10J312(Q)
Manufacturer： Toshiba Semiconductor and Storage
Package/Specification

Product Description： IGBT 600V 10A 60W TO220SM

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

Consult Now

Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Single
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	60 W
Input Type	-
Input Type	Standard

Technical Documentation
Data Book	GT10J312(Q).pdf

Model recommendation

Latest products

IKN03N60RC2ATMA1

IXYS IXGR60N60C2

Microsemi Corporation 78124

IKFW50N60ETXKSA1

IXYS IXGR35N120D1

RGWS80TS65GC13

RGW40TK65DGVC11

STMicroelectronics STGW30H60DF

IRGP4062-EPBF

IGB15N65S5ATMA1

Brand Recommendation

DRANETZ

Lusun

BURNDY

Digi International

Signal Transformer

ETL

STC

Grand Kangxi

Sierra Wireless

YIJIN ELECTRONICFocus on providing electronic components and IC chip products to end customers.本页面提供：Toshiba Semiconductor and Storage GT10J312(Q)Product information, prices, parameters, etc,andToshiba Semiconductor and Storage GT10J312(Q)Related products andbrand。

GT10J312(Q) Original stock-wholesale price

Toshiba Semiconductor and Storage GT10J312(Q)

Consult online customer service