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SIGC109T120R3 Original stock-wholesale price

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SIGC109T120R3

Manufacturer Model： SIGC109T120R3
Manufacturer： Infineon Technologies
Package/Specification

Product Description： INSULATED GATE BIPOLAR TRANSISTO

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x10.06000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Single
Mfr	Infineon Technologies
Series	-
Package	Bulk
Product Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Switching Energy	-
Input Type	Standard
Test Condition	-
Test Condition	-

Technical Documentation
Data Book	SIGC109T120R3.pdf

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SIGC109T120R3 Original stock-wholesale price

SIGC109T120R3

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