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HGT1S10N120BNST Original stock-wholesale price

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HGT1S10N120BNST

Manufacturer Model： HGT1S10N120BNST
Manufacturer： onsemi
Package/Specification

Product Description： IGBT 1200V 35A 298W TO263AB

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x2.85000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Advantage spot

4-11404-2

T3477-018

SBM51214G

I-2X12FOM3LM-CAS-MA

I-2X12FOM3LM-CAS-MB

I-2X12FOM3LM-CAS-FA

Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Single
Mfr	onsemi
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status	Active
Product Status	Active
Product Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	35 A
Current - Collector Pulsed (Icm)	80 A
Power - Max	2.7V @ 15V, 10A
Power - Max	298 W

Technical Documentation
Data Book	HGT1S10N120BNST.pdf

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HGT1S10N120BNST Original stock-wholesale price

HGT1S10N120BNST

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