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GT30N135SRA,S1E Original stock-wholesale price

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GT30N135SRA,S1E

Manufacturer Model： GT30N135SRA,S1E
Manufacturer： Toshiba Semiconductor and Storage
Package/Specification

Product Description： D-IGBT TO-247 VCES=1350V IC=30A

Place of delivery：China （Including VAT） Lead time(weekday）：2 hour shipping

Stock：

Spot goods3590（1 Starting order） (China：2 hour shipping)

Quantity：x3.88000（unit-price）Not the latest price, please consult customer service for details「Package(TR) / 1」

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Product Details
Technical Documentation

Product Classification	Transistors - IGBTs - Single
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 60A
Power - Max	348 W
Input Type	-, 1.3mJ (off)
Input Type	Standard

Technical Documentation
Data Book	GT30N135SRA,S1E.pdf

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GT30N135SRA,S1E Original stock-wholesale price

GT30N135SRA,S1E

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